Dry etching for microelectronicsedited by R. A. Powell

Dry etching and sputtering.

Dry etching is an important process for micro- and nanofabrication. Sputtering effects can arise in two contexts within a dry-etch process. Incoming ions cause removal of volatile products that arise from the interaction between the dry-etch plasma and the surface to be etched. Also, the momentum transfer of an incoming ion can cause direct removal of the material to be etched, which is undesir...

Wet and Dry Etching Theory

Dry Etching Based Silicon Micromachining

The aim of this work is to demonstrate the “dry” etching based micro-fabrication technologies in the manufacturing of Single Crystal Silicon (SCS) for Micro-Electro/(Optical)-Mechanical-Systems (ME(O)MS). The ME(O)MS technology is very fast growing industry branch based often on the same silicon technology as integrated circuits. The process of plasma-dry etching is quite simple straightforward...

High index contrast polysiloxane waveguides fabricated by dry etching

The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPGTM polysiloxane thin films. The use of a silica mask and CHF3 /O2 etch gas led to large etch selectivity between the silica and IPGTM of !20 and etch rates of !100 nm /min. This work indicates that compact optical circuits could be successfully fabricated for telecommunication app...

Synthesis of Ordered Mesoporous Carbon Materials by Dry Etching.

A novel synthesis method for ordered mesoporous carbons is presented. The inverse replication of a silica template was achieved using the carbonization of sucrose within mesoporous KIT-6. Instead of liquid acid etching, as in classical nanocasting, a novel dry chlorine etching procedure for template removal is presented for the first time. The resultant ordered mesostructured carbon material ou...